English

Shanthi Iyer

doi:10.15436/2377-1372.14.001

Abstract

RF-sputtered gallium tin zinc oxide (GSZO) thin fims for application in transparent amorphous oxide semiconductors (TAOSs) have been investigated. Morphological, structural, electrical, optical properties and its mechanical robustness have been studied on polyethylene naphthalate (PEN) substrates using variety of characterization techniques. The fims deposited on PEN substrates retained amorphous structure even after annealing for 12 hours in vacuum at 200°C. The optical band edge is ~ 3.3eV, greater than ZnO fims. Best μHall of 3 cm²V- 1s- 1 have been observed on annealed GSZO fims at 200°C. The critical radii of bending improve from 14.5 mm to 11 mm with decreasing RF power of deposition from 90W to 80W, indicative of its suitability for flxible electronics.

Highlights

Significant strides have been made in the development of amorphous oxide semiconductor (AOS) thin film transistor (TFT) device research in the last few years leading to current widespread applications as switching transistors in the back plane array for high definition flat panel display (FPD) applications, in active matrix liquid crystal displays (AMLCD).The enhanced research in AOS began with the demonstration of amorphous indium gallium zinc oxide (IGZO) TFTs by Nomura et al[1] in 2004
Atomic Force Microscopy atomic force microscopy (AFM) images were taken of 30 nm GSZO films deposited on silicon and annealed for 1 and 8 hours (Figure 1(a) and Figure 1(b)).The depth distribution on these images has been computed from the variation of surface points in reference to the average surface level
These results indicate that the films deposited on polyethylene naphthalate (PEN) substrates retain the amorphous state

Summary

Introduction

Significant strides have been made in the development of amorphous oxide semiconductor (AOS) thin film transistor (TFT) device research in the last few years leading to current widespread applications as switching transistors in the back plane array for high definition flat panel display (FPD) applications, in active matrix liquid crystal displays (AMLCD).The enhanced research in AOS began with the demonstration of amorphous indium gallium zinc oxide (IGZO) TFTs by Nomura et al[1] in 2004. Room temperature deposited GSZO TFTs exhibit a Vth of 6.5 V and Ion/off of 6x107 after being annealed at 300°C. Bend test measurements were taken to calculate the critical radius of GSZO films deposited under different conditions.

Results

Conclusion