Engineering Surface Architectures for Improved Durability in III–V Photocathodes

Abstract

GaInP2 has shown promise as the wide bandgap top junction in tandem absorber photoelectrochemical (PEC) water splitting devices. Among previously reported dual-junction PEC devices with a GaInP2 top cell, those with the highest performance incorporate an AlInP2 window layer (WL) to reduce surface recombination and a thin GaInP2 capping layer (CL) to protect the WL from corrosion in electrolytes. However, the stability of these III-V systems is limited, and durability continues to be a major challenge broadly in the field of PEC water splitting. This work provides a systematic investigation into the durability of GaInP2 systems, examining the impacts of the window layer and capping layer among single junction pn-GaInP2 photocathodes coated with an MoS2 catalytic and protective layer. The photocathode with both a CL and WL demonstrates the highest PEC performance and longest lifetime, producing a significant current for >125 h. In situ optical imaging and post-test characterization illustrate the progression of macroscopic degradation and chemical state. The surface architecture combining an MoS2 catalyst, CL, and WL can be translated to dual-junction PEC devices with GaInP2 or other III-V top junctions to enable more efficient and stable PEC systems.