Energy storage properties of antiferroelectric 0.92NaNbO3-0.08SrZrO3 film on (001)SrTiO3 substrate

Abstract

The present study demonstrates the fabrication of an antiferroelectric 0.92NaNbO3-0.08SrZrO3 film deposited on a SrRuO3 coated (001)SrTiO3 single crystal substrate by pulsed laser deposition. In the 0.92NaNbO3-0.08SrZrO3 film, the domain with its c-axis aligned with the out-of-plane direction contributed to the stabilization of an antiferroelectric phase under the high electric field. The film had an energy storage density of 2.9 Jcm−3 and storage efficiency of 67% at room temperature, which kept at 2.5 Jcm−3 and 50% at high temperature of 150°C.