Magnetic field effects on electronic and optical properties in variant toroidal quantum ring: A comparative study of GaN, GaAs, and CdSe materials

Abstract

In this work, we have examined the electronic and optical properties of three Variant Toroidal Quantum Ring (VTQR) materials, GaN, GaAs, and CdSe, in the presence of an axial magnetic field. Using an infinite potential model and based on the effective mass approximation, we calculated eigenvalues and eigenvectors using the three-dimensional finite difference method. This research aims to improve our understanding of the impact of the magnetic field on VTQRs of different sizes fabricated from various materials, such as GaAs, GaN, and CdSe. We simultaneously studied the geometrical parameters of VTQR nanostructures and the influence of the axial magnetic field on electronic energy, donor energy, electron-donor binding energy, magnetic shift, diamagnetic susceptibility, bandgap energy, and optical band gab. Our results show a strong correlation between electron-impurity binding energy, geometric parameters, and the presence of a magnetic field. CdSe consistently displays the highest binding energy, indicating superior stability under the study conditions. The effects of the magnetic field on these materials vary, with CdSe exhibiting increased sensitivity and GaAs demonstrating the lowest sensitivity. Nanostructure dimensions, including radii and curvature angles, play a central role in modulating the effects of binding energy and magnetic field, reflecting distinct electronic properties.