Abstract
We propose a novel gap-state spectroscopy, namely, the photo-isothermal capacitance transient spectroscopy (ICTS) using below-gap excitation. Using this method, the energy level spectrum as well as the photoionization cross sections of gap states in P-doped a-Si:H have been determined: two features exist at 0.5–0.6 eV and 1.0–1.2 eV below the conduction band edge Ec in the gap-state profile and the photoionization cross section of the gap states has been found to be almost independent of their energy level location and to have value of order of 10 −16 cm 2.
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