Abstract
Using spectroscopic data on lanthanide ions in AlxGa1−xN (0⩽x⩽1) and recently developed methods, the 4f ground state energy for each divalent and trivalent lanthanide relative to the valence and conduction band is established. The obtained energy level schemes provide a complete description of relevant optical and luminescence properties of lanthanide doped AlxGa1−xN (0⩽x⩽1). Especially, the relation between thermal quenching of Eu3+ or Tb3+ emission and the location of the energy levels is explained. The schemes reveal which trivalent lanthanide ions are able to trap electrons in their 4f-shell and which lanthanide ions are potential hole traps.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
