Abstract
Using spectroscopic data on lanthanide ions in AlxGa1−xN (0⩽x⩽1) and recently developed methods, the 4f ground state energy for each divalent and trivalent lanthanide relative to the valence and conduction band is established. The obtained energy level schemes provide a complete description of relevant optical and luminescence properties of lanthanide doped AlxGa1−xN (0⩽x⩽1). Especially, the relation between thermal quenching of Eu3+ or Tb3+ emission and the location of the energy levels is explained. The schemes reveal which trivalent lanthanide ions are able to trap electrons in their 4f-shell and which lanthanide ions are potential hole traps.
Published Version
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