Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

Abstract

In this research, we employed AlOx and AlON thin films as interfacial layers (IL) in ferroelectric capacitors to achieve a significantly large memory window (MW) of 4.5 V and endurance up to 108 cycles. By manipulating the IL materials, we obtain different intensity of voltage drop across the IL, thus changes the depolarization field in HZO, leading to increased MW. Furthermore, we integrated AlO x /AlON into ferroelectric FETs and confirmed that AlO x /AlON indeed enhances the threshold voltage difference (∆V T ), while maintaining an endurance of 109 cycles. this study shed light on design guidelines for large MW memory devices.