EMS Characterization of LDO with on-Chip Decaps by Using Direct RF Power Injection Method

Yin-Cheng Chang,Mao-Hsu Yen,Ping-Yi Wang,Da-Chiang Chang,Ta-Yeh Lin,Hsu-Feng Hsiao,Shawn S.H Hsu,Ming-Shan Lin

doi:10.1109/iwem.2018.8536667

EMS Characterization of LDO with on-Chip Decaps by Using Direct RF Power Injection Method

Yin-Cheng Chang, Mao-Hsu Yen + Show 6 more

https://doi.org/10.1109/iwem.2018.8536667

Copy DOI

Publication Date: Aug 1, 2018

Citations: 4

Affiliation: National Applied Research Laboratories, National Taiwan Ocean University, National Tsing Hua University

#Low Dropout Regulator #Direct RF Power Injection + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

A fully integrated low dropout regulator (LDO) with decoupling capacitors (decaps) for high electromagnetic immunity is designed in the standard $\mathbf{0.18} \mu \mathbf{m}$ CMOS technology. The decaps composed of MOS and MoM capacitors are utilized to decouple the high frequency interference. The characteristic of electromagnetic susceptibility (EMS) of the LDO is performed by the direct RF power injection (DPI) measurement up to 18 GHz. The measured results demonstrate the immunity of LDO with decaps is superior to that of LDO without decaps (maximum improvement of 11.6 dB). Also, the wideband DPI measurement is shown to be capable of characterizing the EMS of ICs.

Full Text