Abstract
Abstract The emission layer (EML) of nanorods is doped with p-type 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) to improve performances of quantum dot light-emitting diodes. The hole-electron balance has been found to enhance in these devices. This has been attributed to increase in hole transport and decrease in electron transport. F4TCNQ also helps to form a more close-packed film and decreases the percentage of voids in EML from 9.5% to 1.3%. It makes good contact between the EML and other functional layers. As a result, the optimized device acquires the 68% enhancement in external quantum efficiency to 11.6% and 85% enhancement in luminance to 16222 cd/m2, respectively.
Published Version
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