Abstract
The enhancement in external quantum efficiency of a red light-emitting diode (LED) from photonic crystal (PhC) hole patterns was investigated. A red LED was chosen because its epitaxial layers are relatively free from defects as compared to GaN-based LEDs. The peak emission wavelength was 642 nm, and a triangular-lattice PhC was designed with a hole diameter to lattice distance ratio of 0.5. The lattice distance to wavelength ratio (a/lambda) was varied from 0.2 to 4.6 in order to evaluate the enhancement in the external quantum efficiency. An improvement in efficiency greater than 75% was obtained for a/lambda between 0.6 and 2.0. This improvement of the optical characteristics occurred with unchanged electrical properties
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