Abstract
Two dimensional plasmons in submicron transistors have attracted much attention due to their nature of promoting emission/detection of electromagnetic radiation in the terahertz range. We have recently proposed and fabricated a highly efficient, broadband plasmon-resonant terahertz emitter. The device incorporates doubly interdigitated grating gates and a vertical cavity into a high electron mobility transistor. The device operates in various modes: (1) DC-current-driven self oscillation, (2) CW-laser excited terahertz emission, (3) two-photon injection-locked difference-frequency terahertz emission, and (4) impulsive laser excited terahertz emission. Furthermore, the device can operate in completely different functionalities including ultrahigh-speed intensity modulation for terahertz carrier waves. This paper reviews recent advances on plasma wave devices.
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