Abstract
TeraHertz emission from High Electron Mobility Transistors has been recently measured from experiments. The experiments show emission spectra with two peaks in the TeraHertz range: one around 1 THz is sensitive to drain and gate voltages, and another one around 5 THz which is fixed. In order to get physical insight into the microscopic mechanism at the basis of the radiation emission we have performed a Monte Carlo simulation of the measured transistors using the current noise spectra as sensitive probes to detect the presence of electrical instabilities. Numerical results are found to be in good agreement with experiments confirming the presence of an oscillatory dynamics in the TeraHertz range.
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