Abstract
This paper reports on emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for sensing applications. The device structure is based on a high-electron mobility transistor and incorporates the authors' original asymmetrically interdigitated dual-grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.
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