Abstract
AbstractWe studied the dielectric functions of Ge nanocrystals obtained by crystallization of amorphous Ge thin films embedded in SiO2. Partial crystallization of films was induced by thermal annealing. Crystalline regions gave rise to clear spectral features due to interband transitions whose critical point parameters correlated with the initial a‐Ge thickness. These changes were clearly attributed to quantum confinement effects. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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