Abstract
The crystallization of amorphous metal oxide thin films was achieved by RF plasma treatment. Although various amorphous films are crystallized after 2 min or so, the sample temperature is lower than 150 °C without compulsory cooling even when the films are treated for 1 h. The oxygen gas pressure on the plasma treatment was found to be the key parameter on the crystallization. This treatment works on amorphous films of various materials, independently of the film preparation method and substrate materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
