Abstract
The reversible changes in the optical properties of the phase-change materials have made the rewritable optical storage possible which has revolutionized the dissemination of data since 1990s. For the last two decades, the phase-change materials have been studied extensively for its applications as nonvolatile memory elements (phase-change memory (PCM) devices). While the PCM devices were initially considered as replacements for the flash memory, today they promise a universal memory acting as the main memory and the storage unit. Here we demonstrate a simple alternative to study phase-change films and devices for further fundamental studies. The films are deposited using a single sputtering target and the devices are formed using single lithography, deposition and liftoff steps. The electrical resistivity of the films and devices are characterized in a temperature range varying from room temperature to 250 °C. Finally, microscale GST wires are amorphized by melting using self-heating and quenching.
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