Abstract

The largest number of electrostatic discharge (ESD) failures have occurred in linear microcircuits employing one or more MOS capacitors. The detection of ESD failures is considered. The phenomena involved in the generation of static charge are examined and a description is provided of approaches which can be used to protect microcircuits from ESD hazards. It is pointed out that ESD failures can virtually be eliminated if the procedural guidelines of protecting static-sensitive devices are implemented and conscientiously observed.

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