Abstract
AbstractMicro‐electro‐mechanical (MEM) and nano‐electro‐mechanical (NEM) systems sometimes use beam‐ or plate‐shaped conductors that can be very thin—with h/L≈𝒪(10−2–10−3) (in terms of the thickness h and length L of a beam or the side of a square pate). Conventional boundary element method (BEM) analysis of the electric field in a region exterior to such thin conductors can become difficult to carry out accurately and efficiently—especially since MEMS analysis requires computation of charge densities (and then surface tractions) separately on the top and bottom surfaces of such objects. A new boundary integral equation (BIE) is derived in this work that, when used together with the standard BIE with logarithmically singular kernels, results in a powerful technique for the BEM analysis of such problems with thin beams. This new approach, in fact, works best for very thin beams. This thin beam BEM is derived and discussed in this work. Copyright © 2005 John Wiley & Sons, Ltd.
Published Version
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