Abstract
Micro-electro-mechanical systems (MEMS) sometimes use beam or plate shaped conductors that can be very thin-with h / L ≈ O ( 10 − 2 − 10 − 3 ) (in terms of the thickness h and length L of the side of a square pate). Conventional Boundary Element Method (BEM) analysis of the electric field in a region exterior to such thin conductors can become difficult to carry out accurately and efficiently—especially since MEMS analysis requires computation of charge densities (and then surface tractions) separately on the top and bottom surfaces of such plates. A new boundary integral equation (BIE) is derived in this work that, when used together with the standard BIE with weakly singular kernels, results in a powerful technique for the BEM analysis of such problems. This new approach, in fact, works best for very thin plates. This thin plate BEM is derived and discussed in this work. Numerical results, from several BEM based methods, are presented and compared for the model problem of a parallel plate capacitor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
