Abstract
A GaInNAs/GaAs five-layer asymmetric coupled quantum well (FACQW) in the 1.3-µm-wavelength region was proposed and theoretically analyzed. The valence band structures of the FACQW were analyzed using the Luttinger–Kohn Hamiltonian based on the k·p perturbation theory and a nonvariational method. The GaInNAs/GaAs FACQW can exhibit a unique behavior of the quantum confined Stark effect, leading to a large electrorefractive index change (Δn/ΔF = 3.9 ×10-4 cm/kV) at a small electric field in a wide-transparency-wavelength region far from the absorption edge. This characteristic is comparable to InGaAs/InAlAs and InGaAsP FACQWs operated in the 1.55-µm-wavelength region. The GaInNAs/GaAs FACQW is expected to realize ultrawide-band, ultrafast optical modulators and switches and other functional devices based on the phase shift in the 1.3-µm-wavelength region. The driving voltage of a 1 mm-phase modulator is estimated to be 0.4 V.
Published Version
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