Abstract
In the work, the multicomponent Pb0.75Ba0.25(Zr0.65Ti0.35)1-aSnaO3 (PBZT/Sn) ceramics were obtained with various tin amounts (a from the range of 0.0 to 0.1). The densification of the PBZT/Sn ceramic samples was performed using pressureless sintering method. The effect of SnO2 content on the crystal structure of PBZT/Sn ceramics, microstructure, DC electrical conductivity and electrophysical properties (including dielectric and ferroelectric testes), were investigated. The PBZT/Sn ceramic samples exhibit high values of dielectric permittivity at the temperature of ferro-paraelectric phase transition and show the relaxor character of phase transition. Excessive SnO2 contents doping of the PBZT/Sn materials (already for a = 0.1) might lead to lattice stress and structure defects, which successively leads to the deterioration of ferroelectric and dielectric properties of the ceramic samples. The presented research shows that the addition of SnO2 to the base PBZT compound (in the proper proportion) gives an additional possibility of influencing the parameters essential for practical applications, from the areas of micromechatronics and microelectronics.
Highlights
Ferroelectric PZT-type materials belong to the most renowned families of functional materials and are at the peak of research, as well as have attracted the attention of technologists and researchers due to their excellent piezoelectric, pyroelectric and non-linear optical properties [1,2,3]
It suggests that in the obtained PBZT/Sn ceramic samples tin incorporates into B-positions of the crystal lattice
The results show that all of the ceramic samples are well sintered and the grain boundaries are clear with few pores
Summary
Ferroelectric PZT-type materials belong to the most renowned families of functional materials and are at the peak of research, as well as have attracted the attention of technologists and researchers due to their excellent piezoelectric, pyroelectric and non-linear optical properties [1,2,3]. Ferroelectric materials with diffuse phase transition provide the basic requirements to obtain ceramic materials with high dielectric permittivity and low temperature coefficients, necessary for multilayer ceramic capacitor applications [5]. The Ba-modified Pb(Zr1-xTix)O3 (PBZT) ceramic composition remains for many years an interesting ferroelectric material, as a result of interesting physical properties In our previous work [7], we investigated PBZT doped by Sn4+ i.e. the solid solution of Pb0.75Ba0.25(Zr0.65Ti0.35)1aSnaO3 (PBZT/Sn) with rhombohedral structure (in the ceramic form), with various amounts of tin The introduction of the tin admixture into the base composition was intended, inter alia, to reduce the width of the hysteresis loop while maintaining optimal electric parameters of the obtained materials. We continue the investigations from our works [7, 28]
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