Electronics Irradiation With Neutrons at the NEAR Station of the n_TOF Spallation Source at CERN

Abstract

We study the neutron field at the NEAR station of the neutron time of flight (n_TOF) facility at CERN, through Monte Carlo simulations, well-characterized static random access memories (SRAMs) and radio-photo-luminescence (RPL) dosimeters, with the aim of providing neutrons for electronics irradiation. Particle fluxes and typical quantities relevant for electronics testing were simulated for several test positions at NEAR and compared to those at the CERN high energy accelerator mixed-field facility (CHARM), highlighting similitudes and differences. The SRAM detectors, based on single event upset (SEU) and single event latch-up (SEL) counts, each one with a different energy response, and RPL dosimeters were tested in a reference position and the results were benchmarked to FLUKA simulations. Finally, the neutron spectra at NEAR are compared to those of the most well-known spallation sources and typical environments of interest, for accelerator and atmospheric applications, showing the potential of the facility for electronics irradiation.