Abstract
The electrical transport of polycrystalline samples ${\mathrm{Sm}}_{x}{\mathrm{C}}_{60}$ has been investigated by resistivity and magnetoresistance (MR) measurements. The transport mechanism is different for the samples with different $x$ in ${\mathrm{Sm}}_{x}{\mathrm{C}}_{60}$ system. The temperature-dependent resistivity can be explained by the fluctuation-induced-tunneling model for the sample ${\mathrm{SmC}}_{60}.$ The transport properties for the sample ${\mathrm{Sm}}_{2.75}{\mathrm{C}}_{60}$ appear to be dominated by weak localization (WL) and electron-electron interactions. The MR data of the sample ${\mathrm{SmC}}_{60}$ cannot be fitted by a weak-localized model with strong electron-electron interactions. The anomalous large MR of the sample ${\mathrm{SmC}}_{60}$ seems not to be explained by a change within the metallic regions, and could arise from the insulating barriers.
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