Abstract
The electrical transport of polycrystalline samples SmxC60 has been investigated by resistivity and magnetoresistance (MR) measurements. The transport mechanism is different for the samples with different x in SmxC60 system. The temperature-dependent resistivity can be explained by the fluctuation-induced-tunneling model for the sample SmC60. The transport properties for the sample Sm2.75C60 appear to be dominated by weak localization and electron-electron interactions. The MR data of the sample Sm2.75C60 can be fitted by a weak-localized model with strong electron-electron interactions, but that of the sample SmC60 cannot.
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