Electronic transport behaviors of Ni–Nb–Zr–H glassy alloys

Abstract

The electronic transport behaviors of (Ni0.36Nb0.24Zr0.40)100−yHy (0≤y≤20) glassy alloys with distorted nanostructural icosahedral Zr5Nb5Ni3 clusters have been studied as a function of hydrogen content. These alloys show semiconducting, room-temperature superior electric transport, superconducting (onset temperature of 10 K) and electron avalanche behaviors, and electric current-induced voltage (Coulomb) oscillation, as hydrogen content increases. These results suggest that the localization effect of hydrogen at the outside and inside space of the clusters plays important roles in various electron transport phenomena.