Abstract
In the quasi-one-dimensional halogen-bridged metal complexes, the Pt and Pd compounds have charge density wave (CDW) states or the M II–M IV mixed-valence states where the bridging halogens are distorted from the midpoints between neighboring two metal ions due to the stronger electron–phonon interaction. However, Ni compounds have spin density wave (SDW) states or the M III states where the bridging halogens are located at the midpoints between neighboring two metal ions, due to the stronger electron-correlation. These Ni compounds are not Mott-insulators but charge-transfer-insulators. The electronic structures in [Ni III(chxn) 2X]Y 2 (chxn=cyclohexanediamine; X=Cl, Br and mixed-halides; Y=Cl, Br, mixed-helides, NO 3, ClO 4 and BF 4) are tuned by substituting the bridging halogens and counteranions. The competition between the SDW states in Ni III sites and the CDW states in Pd II–Pd IV sites in the Ni–Pd mixed-metal compounds, Ni 1− x Pd x (chxn) 2Br 3, has been investigated. The Pd II–Pd IV states are approaching the Pd III states with increase of the Ni components in this system due to the stronger electron-correlation in Ni III sites.
Published Version
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