Electronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe3

Abstract

The newfound two-dimensional antiferromagnetic $\mathrm{Gd}{\mathrm{Te}}_{3}$ has great potential in novel magnetic twistronic and spintronic devices because it has the highest carrier mobility among all known layered magnetic materials. Here, we used high-resolution angle-resolved photoemission spectroscopy to investigate its Fermi-surface topology and low-lying electronic band structure. The Fermi surface is partially gapped by charge-density waves below the transition temperature. Very steep and nearly linear band dispersion near the Fermi energy contributes to the high carrier mobility in $\mathrm{Gd}{\mathrm{Te}}_{3}$. We find that the scattering rate of the quasiparticle increases linearly as a function of binding energy within a wide energy range, indicating that $\mathrm{Gd}{\mathrm{Te}}_{3}$ is a non-Fermi-liquid metal. Our results in this paper provide a fundamental understanding of this layered antiferromagnetic material to guide future studies on it.