Abstract

Novel topological state of matter is one of the rapidly growing fields in condensed matter physics research in recent times. While these materials are fascinating from the aspect of fundamental physics of relativistic particles, their exotic transport properties are equally compelling due to the potential technological applications. Extreme magnetoresistance and ultrahigh carrier mobility are two such major hallmarks of topological materials and often used as primary criteria for identifying new compounds belonging to this class. Recently, LaBi has emerged as a new system, which exhibits the above mentioned properties. However, the topological nature of its band structure remains unresolved. Here, using the magnetotransport and magnetization measurements, we have probed the bulk and surface states of LaBi. Similar to earlier reports, extremely large magnetoresistance and high carrier mobility have been observed with compensated electron and hole density. The Fermi surface properties have been analyzed from both Shubnikov-de Haas and de Haas-van Alphen oscillation techniques. In the magnetization measurement, a prominent paramagnetic singularity has been observed, which demonstrates the non-trivial nature of the surface states in LaBi. Our study unambiguously confirms that LaBi is a three-dimensional topological insulator with possible linear dispersion in the gapped bulk band structure.

Highlights

  • Materials with large magnetoresistance (MR) have always attracted attention due to their possible applications in magnetic valves, sensors and memory device technology[1,2,3]

  • While a number of studies have been focused on the magnetotransport properties of LaBi, the topology of the electronic band structure remains substantially unexplored

  • From the recent ARPES measurements, multiple Dirac cones have been observed at the surface of LaBi, which support the picture of a topological insulator, as predicted by band structure calculation

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Summary

Introduction

Materials with large magnetoresistance (MR) have always attracted attention due to their possible applications in magnetic valves, sensors and memory device technology[1,2,3]. We have used the magnetotransport and magnetization measurements to probe the nature of the bulk and surface electronic band structure of LaBi. In several earlier studies on LaBi, the Fermi surface properties have been analyzed from the Shubnikov-de Haas (SdH) oscillation, observed in the MR. To complement the SdH oscillation results, we have analyzed the de Haas-van Alphen (dHvA) oscillation in the magnetization measurement This technique is free from interference effects, but the appearance of much sharper and readily distinguishable oscillation peaks down to very low magnetic field suggests that dHvA is a much better probe to study the Fermi surface properties than the SdH technique, which often requires high magnetic fields. This technique requires large surface-to-volume ratio to minimize the bulk dominated transport and can only be observed in samples with reduced dimension such as nanowire, nanoribbon etc[26, 27]

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