Abstract
The electronic properties of clean Si(110)16x2 and Si(110)2x3Sb surfaces have been studied by Angle Resolved Ultraviolet Photoelectron Spectroscopy (ARUPS) and Surface Differential Reflectivity (SDR). For the clean 16×2 surface four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiments revealed transitions between filled and empty surface states at ∼1.8, 2.4 and 2.9 eV. Antimony has been subsequently evaporated (about one monolayer) thus obtaining a 2×3 reconstruction. The surface electronic structure resulted to be strongly modified with only two surface state bands observed in ARUPS and no optical transitions detected by SDR in our energy range (1.3–3.5 eV).
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