Abstract
The electronic properties of a clean Si(110)-16×2 surface have been studied by angle resolved ultraviolet photoelectron spectroscopy (ARUPS) and surface differential reflectivity (SDR). Four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiments revealed transitions between filled and empty surface states at ∼1.8, 2.4, and 2.9 eV. The results have been explained on the basis of a new structural model of the Si(110) 16×2 phase using adatoms, rest atoms and dimers as building blocks similarly to the case of the Si(111) 7×7 dimer-adatom-stacking fault (DAS) model.
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