Abstract
Heterostructure devices composed of Si, Si1−x Gex or Ge layers will broaden the spectrum of the well established Si-microelectronics. Attractive goals are advanced device performances, enlarged design flexibilities, novel types of devices and multifunctional monolithic integrated circuits. Basic aspects of the epitaxial layer composition and the device technology are reported here. Si/SiGe hetero bipolar transistors (HBTs) and Si/SiGe modulation doped field effect transistors (MODFETs) will be described in more detail. Those have demonstrated just in the last year extremely promising room temperature and 77K performances (e.g. MODFET transconductances above 500 mS/mm, HBT cut off frequencies above 40 GHz). As a promising future application a complementary arrangement of a n- and a p-channel MODFET (named CMOD) will be presented.
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