Abstract
The magnitude of band-gap narrowing for GaAs-based alloys was calculated, and these results were included in one-dimensional heterojunction device models for strained In/sub 0.15/Ga/sub 0.85/As quantum-well modulation-doped field-effect transistors (MODFETs). Equivalent rigid shifts of as much as 102 meV were obtained for the valence band of depleted p-type In/sub 0.15/Ga/sub 0.85/As doped at 5*10/sup 18//cm/sup 3/. Simulations suggest that band-gap narrowing is most significant for p-channel MODFETs. The predicted effect of band-gap narrowing in p-channel MODFETs is the formation of parasitic conduction in the low-mobility parent dopant region. The parasitic conduction would reduce the intrinsic gain. >
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