Abstract
AbstractUsing the self‐consistent and perturbative method of Jaros and the full potential linear muffin tin orbitals (FP‐LMTO) method coupled to a plane wave (PLW) basis in the interstitial regions, we calculate the bandstructure of some ultrathin Sim/(SiGe)n quantum well superlattices, m and n being the numbers of atomic layers. The results show that in these systems the bandgap is indirect and that these superlattices have a type II potential configuration.
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