Abstract
The present paper deals with the electronic properties of GaP and GaN zinc-blende/zincblende superlattices using the plane wave version of the full potential linear muffin-tin orbital (FPLMTO) method, which allows an accurate treatment of the interstitial regions. It is found that bowing, which is known to occur for ternary GaPN dilute nitrides, is absent from GaP/GaN 〞dilute nitride〞 superlattices with N concentrations greater than 7%, but it can be obtained in these same superlattices for high nitride concentrations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
