Abstract
Diamond Schottky barrier diodes (SBDs) were fabricated on silicon-based heteroepitaxially grown diamond substrates. Platinum Schottky metal and boron-doped p-type diamond were used as SBDs. The diodes exhibited good current–voltage (I–V) characteristics. The rectification ratio was over 1012 at ±4 V, and the ideality factor was 1.2. The breakdown voltage estimated at the metal/diamond interface was as high as ∼1 MV/cm, which is greater than the material limit of silicon (∼0.3 MV/cm). This achievement, which does not require the use of single-crystalline diamond substrates, will accelerate the development of the diamond electronic industry.
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