Abstract
Vertical structure metal-insulator-p-type diamond Schottky barrier diodes (SBDs) with different thickness drift layers have been fabricated. Un-doped single crystal diamond layers were grown on HPHT boron doped diamond substrates as the drift layers. Then, Mo/Ni/Au was deposited on the drift layer as Schottky electrode and Ti/Au was deposited on the back side of diamond substrate as ohmic electrode. The ideality factor and Schottky barrier height of diode were evaluated from current-voltage curve. The minimum reverse current density of SBD could be as low as 100 pA/cm2 at 10 V and the maximum forward current density is 7570 A/cm2 at − 10 V. The rectification ratio and the breakdown electric field reached 12 orders and 4.2 MV/cm, respectively.
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