Abstract
Using deep‐level transient spectroscopy, deep levels and capture cross sections of defects introduced by high‐fluence electron irradiation of thick halide vapor‐phase epitaxy‐grown GaN has been studied. After irradiation with 2 MeV electrons to a high fluence of 5 × 1016 cm−2, four deep electron trap levels, labeled T1 (EC − 0.13 eV), T2 (EC − 0.18 eV), T3 (EC − 0.26 eV), T4, and a broad band of peaks, labeled T5, consisting of at least two levels were observed. These defects, except T1 and T3, were annealed out after annealing at 650 K for 2 h. The levels T1, T3, and the broad peak T5 exhibits electric field‐enhanced emission The capture cross section is found to be temperature independent for T2 and T3, whereas T1 shows a decreasing capture cross section with increasing temperature, suggesting that electron capturing to T2 is governed by a cascade capturing process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
