Abstract
In this experimental work, some electronic properties of vacuum evaporated Cu/SiO 2/Cu structures such as circuiting I c and emission I e currents versus the applied voltage, electron attenuation lengths in both copper and SiO 2 layers and the role of the latter layers have been investigated. Experimental results show that these devices undergo an electroforming process leading to resistivity decrease of several orders of magnitude along with a negative resistance region in their current–voltage characteristics. By decreasing the temperature, both I c and I e are decreased and at low temperatures the negative resistance region disappears completely. Electron attenuation lengths are measured between 6 and 14 V for copper and SiO 2 layers and their significance are discussed on the base of electron-impurity and electron-defect scatterings. The conduction mechanism is also discussed on the base of a filamentary model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
