Abstract
Problem statement: The electrical properties of thin film structures consisting of metalinsulator- metal sandwiches are important in electronic devices. Approach: The electrical properties of thin film structures consisting of metal-insulator-metal sandwiches are investigated in this experimental work. Results: We are discussed of the electroformed metal-insulator-metal structures Au-MgF2-Au and comparison with other Au-SiO/CeF3-Au, Cu-CeF3-Cu, Cu-SiO-Cu, Au-CeF3-Au specimens. There explains various properties including electron emission, electroluminescence, memory effects and, the differential negative resistance. The article is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunneling between metal islands produced in the forming process. These devices undergo an electroforming process leading to resistivity decrease of several orders of magnitude along with a negative resistance region in their I-V characteristics. Conclusion/Recommendations: Experimental results show that Cu-SiO-Cu and Au- MgF2-Au Mg specimens have high circulating current at room temperature and can be implication for the production of commercial electroformed devices such as cold cathode.
Highlights
The phenomenon of electroforming, or forming, of thin-film Metal-Insulator-Metal (MIM) structures has been known for half a century (Dearnaley et al, 1970), delineating the main facts and theories, gave an excellent review of the field and a more concise review is given by (Ghaforyan et al, 2008)
Ghaforyan et al, has shown that, the transfer ratio is defined as the ratio of electron emission current Ie to the circulating current Ic for a given voltage applied across the sandwich
A Kitley G10 continues to show a negative resistance region for electrometer was used for measurement of the emission currents with the accuracy of 10−15 A
Summary
The phenomenon of electroforming, or forming, of thin-film Metal-Insulator-Metal (MIM) structures has been known for half a century (Dearnaley et al, 1970), delineating the main facts and theories, gave an excellent review of the field and a more concise review is given by (Ghaforyan et al, 2008). Ghaforyan et al, has shown that, the transfer ratio is defined as the ratio of electron emission current Ie to the circulating current Ic for a given voltage applied across the sandwich Results of such experiments indicated a strong attenuation of electrons in the top metal electrode and provided evidence of inelastic interactions of the injected electrons in the top layer (Hickmott, 1962; Ilyas and Hogarth, 1983; Mordvintsev et al, 1998; Ray and Hogarth, 1985; Sharpe and Palmer, 1996; Silva et al, 2001; Simmons, 1963a; 1963b; Thurstans and Oxley, 2002; Reda, 2010; Iskandarani, 2010; Fen et al, 2011; Al-Saqer et al, 2010; Sadeghi et al, 2009)
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