Electronic levels and properties of the selfinterstitials in irradiated silicon

Abstract

DLTS studies of the electronic states and properties of irradiated p-type silicon are performed. The injection-enhanced annealing is observed for two traps E2( E c−0.39 eV) and E1( E c−0.26 eV). The annealing of E2 and E1 are simulataneous with the growth of the hole traps connected with V, C i and Al i. It is concluded that the observed electronic levels belong to the different charge states of silicon selfinterstitial E2=Si i +3s 23p)/Si i 2+(3s 2) and E1=Si i 0(3s 23p 2)/Si i +(3s 23p). The conclusion is confirmed by the differences of the cross-sections of the formation of Al i and C i as well as by the influenceof the zero and reverse bias conditions on the introduction rate and optical annealing of the E2 state.