Abstract
The D1-center was first detected in H-soaked silicon after electron irradiation and subsequent annealing at 350°C. In the present study, we observe this center also in irradiated oxygen-rich silicon after hydrogenation by chemical etching at room temperature. The analysis of the depth profiles near the etched surface shows that the center contains one hydrogen atom. The non-hydrogenated precursor of the D1-center is a radiation defect, which anneals out at ∼400°C. The precursor introduction rate in the oxygen-rich, moderately doped crystals is comparable to that of the A-center. From our studies we identify the D1-center as the CiOiH complex.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
