Abstract
A wide range of carbon doping in molecular‐beam‐epitaxy‐grown GaAs and AlGaAs alloys was obtained by means of a new electron‐beam heated solid source. Free hole concentrations from low 1015 cm−3 to over 1×1020 cm−3 were reproducibly obtained in GaAs and in direct‐gap AlxGa1−xAs while maintaining good surface morphology. These results extend the doping range in both directions with respect to commercial solid carbon sources. High activation percentage, negligible memory effects and diffusion were demonstrated via secondary ion mass spectrometer and photoluminescence measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
