Electron transport properties of AlGaAs/GaAs heterostructure containing a d‐doping in the quantum well

Abstract

AbstractElectronic properties of the Si δ‐doped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (xAl(Si)) is varied. Shubnikov–de Haas and quantum Hall effect measurements at 4.2 K have been carried out to investigate the existence of a quasi‐two‐dimensional electron gas (2DEG) in such structures. We have studied the effects of the Al concentration xAl(Si) on the electronic properties. Results show an improvement of the electron transport properties when xAl(Si) decreases. But as far as the electron mobility is concerned, a slight difference between the theoretical and experimental values was observed. The value of interface charge density (NBI) is necessary to explain the experimental mobility at low temperature. For NBI ≈ 6 × 109 cm–2, we have obtained a good agreement between the theoretical and experimental electron mobility. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)