Abstract
ZnTe films have been prepared by hot wall epitaxy onto glass and single-crystal potassium chloride substrates. The electron transport properties in polycrystalline and single-crystal films have been reported. The electrical resistivity decreases very slowly up to dopant concentrations 1016 at./cm3 followed by a steep fall. The drift mobility appears to be fairly constant over a wide range of dopant concentrations, while it shows rapid decline on heavy doping.
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