Abstract
Conductivity of photo-CVD microcrystalline silicon (μc-Si:H) in wide range of dopant gas concentration (10−5<PH3/SiH4, B2H6/SiH4<10−2) is investigated. As compared with a-Si:H, the conductivity of the film is improved more than two orders of magnitude by microcrystallization for a wide range of dopant concentration at a deposition temperature of as low as 150°C. This indicates the suitability of photo-CVD for low temperature processing. A conductivity minimum is found at a doping ratio of about B2H6/SiH4=1×10−5.
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