Abstract
We present the electronic spectrum of a n-type delta-doped quantum well in Si coupled to a p-type delta-doped barrier within the envelope function efiective mass approximation. We applied the Thomas-Fermi approximation to derive an analytical expression for the conflning potential, and thus, we obtain the electronic structure in a simple manner. We analyzed the electron subband structure varying the distance between the doping planes (l) as well as the impurity density in them (n2D; p2D). We also study the mobility trends through an empirical formula that is based on the electron levels, the electron wave functions and the Fermi level. We flnd a monotonic decrease in the mobility as the p-type barrier moves away from the n-type well, and optimum parameters, l = 70 and n2D = 5 £ 10 12 cm i2 and p2D = 5 £ 10 13 cm i2 , for maximum mobility.
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