Abstract
The nonlocal dielectric function, calculated using the random phase approximation (RPA) is obtained for a delta-doped quantum well of Si in GaAs. The formal analysis can be performed by considering the response function in the RPA and/or further approximations. The behavior of the real and imaginary parts of the dielectric function is studied for different values of three basic parameters of the system: the energy of an exciting signal, the in-plane linear momentum, and the distance from the doping plane as a function of the concentration of electrons in the doping plane. The results are obtained varying the concentration of electrons in the doping plane from n2D=3×1012 to 7×1012 cm−2. They show a natural change in the intensity of the dielectric response as long as the concentration changes from n2D=6×1012 to 7×1012 cm−2, in agreement with recent experimental results for the mobility of electric carriers.
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