Year-end Sale % OFF 
Abstract
High-quality n-type modulation doped Si SiGe heterostructures are fabricated by rapid thermal chemical vapor deposition and electrically characterized by Hall effect measurements from temperature (RT) to 2 K. A new technique for the direct measurement of both the RT mobility and RT density of confined electrons in the Si channel is presented. It consists in chemically etching the doped SiGe overlayer, thus reducing its contribution to the transport properties of the structures. The consistent interpretation of the Hall data is made using the two-carrier-type Hall model and shows that a RT electron mobility of 2150 cm 2/V · s is systematically obtained in the strained Si channel. Furthermore, the conduction band discontinuity between the strained Si channel and the relaxed Si 0.67Ge 0.33 overlayer is experimentally determined ( ΔE c = 320 ± 30 me V). Finally, this study suggests that the RT mobility of Si SiGe heterostructures is only dependent on the Ge concentration, i.e. on the stress in the Si channel.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
