Abstract
In this work, we employ the substrate hot electron injection technique as a characterization tool to examine the defect creation mechanisms in high-k HfSiON gate stacks, taking advantage of the independent control over oxide field, electron fluence, and injected electron energy which the technique allows. We show that defect creation and oxide breakdown are dependent on the energy of the injected electrons and not on the oxide field. Furthermore, we show that the energy of the injected electrons governs whether the majority of the defects are created at the Si∕SiO2 interface or in the bulk of the material. Results show that at operating conditions, the primary threat to device reliability from hot carrier damage is the introduction of a permanent 3D positive bias temperature instability component introduced by increased interface trap generation, even for carriers with energy slightly above that of field accelerated electrons. We also discuss the feasibility of using substrate hot electron injection as a means to accelerate time dependent dielectric breakdown measurements, thereby allowing degradation at lower oxide fields to be probed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.