Abstract
Vertical cavity surface emitting structures designed for electron beam (EB) pumping have been grown by plasma assisted molecular beam epitaxy (PA-MBE). For the first time, AlGaN/AlN DBRs in conjunction with dielectric SiO 2 /HfO 2 reflectors are utilized to embed GaN/AlGaN MQWs. PL spectra measured under weak photoexcitation reveal an enhancement of spontaneous emission reaching a Q factor of 425. One hybrid structure has been successfully pumped by pulsed EB and laser excitation showing an onset of stimulated emission.
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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